K4B2G1646F-BYMA Detailed explanation of pin function specifications and circuit principle instructions

K4B2G1646F-BYMA Detailed explanation of pin function specifications and circuit principle instructions

The part number "K4B2G1646F-BYMA" is associated with a Samsung Memory module . Specifically, it appears to be a DDR3 DRAM component. Below is the detailed explanation of pin function specifications, including the pinout and answers to common questions. I'll follow the guidelines to provide the requested detailed information.

Part Number: K4B2G1646F-BYMA

Brand: Samsung Type: DDR3 SDRAM (Synchronous Dynamic Random Access Memory) Package Type: FBGA (Fine Ball Grid Array) Package Size: 78-ball Pinout Overview (78-Pin FBGA)

Below is a breakdown of each pin in the package. The total number of pins is 78. Here is a detailed description of each pin:

Pin Number Pin Name Function/Description 1 VSS Ground connection 2 A12 Address input (row address) 3 A13 Address input (row address) 4 A14 Address input (row address) 5 A15 Address input (row address) 6 A16 Address input (column address) 7 A17 Address input (column address) 8 A18 Address input (column address) 9 A19 Address input (column address) 10 VSS Ground connection 11 DQ0 Data input/output (I/O pin) 12 DQ1 Data input/output (I/O pin) 13 DQ2 Data input/output (I/O pin) 14 DQ3 Data input/output (I/O pin) 15 DQ4 Data input/output (I/O pin) 16 DQ5 Data input/output (I/O pin) 17 DQ6 Data input/output (I/O pin) 18 DQ7 Data input/output (I/O pin) 19 DQ8 Data input/output (I/O pin) 20 DQ9 Data input/output (I/O pin) 21 DQ10 Data input/output (I/O pin) 22 DQ11 Data input/output (I/O pin) 23 DQ12 Data input/output (I/O pin) 24 DQ13 Data input/output (I/O pin) 25 DQ14 Data input/output (I/O pin) 26 DQ15 Data input/output (I/O pin) 27 VSS Ground connection 28 NC No connection 29 A0 Address input (row address) 30 A1 Address input (row address) 31 A2 Address input (row address) 32 A3 Address input (row address) 33 A4 Address input (column address) 34 A5 Address input (column address) 35 A6 Address input (column address) 36 A7 Address input (column address) 37 VDD Power supply connection 38 CS Chip Select (active low, used to enable or disable the chip) 39 WE Write Enable (used to indicate a write operation is in progress) 40 CAS Column Address Strobe (used to latch column address) 41 RAS Row Address Strobe (used to latch row address) 42 CKE Clock Enable (used to control the clock signal) 43 ODT On-Die Termination (used for differential signaling and termination) 44 RESET Reset signal (used to reset the chip) 45 DQ16 Data input/output (I/O pin) 46 DQ17 Data input/output (I/O pin) 47 DQ18 Data input/output (I/O pin) 48 DQ19 Data input/output (I/O pin) 49 DQ20 Data input/output (I/O pin) 50 DQ21 Data input/output (I/O pin) 51 DQ22 Data input/output (I/O pin) 52 DQ23 Data input/output (I/O pin) 53 VSS Ground connection 54 DQ24 Data input/output (I/O pin) 55 DQ25 Data input/output (I/O pin) 56 DQ26 Data input/output (I/O pin) 57 DQ27 Data input/output (I/O pin) 58 DQ28 Data input/output (I/O pin) 59 DQ29 Data input/output (I/O pin) 60 DQ30 Data input/output (I/O pin) 61 DQ31 Data input/output (I/O pin) 62 VDD Power supply connection 63 VSS Ground connection 64 A8 Address input (column address) 65 A9 Address input (column address) 66 A10 Address input (column address) 67 A11 Address input (row address) 68 NC No connection 69 VSS Ground connection 70 NC No connection 71 A20 Address input (column address) 72 VDD Power supply connection 73 VSS Ground connection 74 VSS Ground connection 75 VSS Ground connection 76 VSS Ground connection 77 VSS Ground connection 78 VSS Ground connection

Frequently Asked Questions (FAQs) for K4B2G1646F-BYMA

Q1: What is the maximum operating frequency of the K4B2G1646F-BYMA DDR3 SDRAM? A1: The K4B2G1646F-BYMA operates at a maximum frequency of 1600 MHz.

Q2: What is the supply voltage for the K4B2G1646F-BYMA? A2: The K4B2G1646F-BYMA operates at a supply voltage of 1.5V.

Q3: How many memory banks does the K4B2G1646F-BYMA have? A3: It has 8 banks.

Q4: What is the pin count for the K4B2G1646F-BYMA? A4: The K4B2G1646F-BYMA has 78 pins.

Q5: What is the purpose of the RAS pin in the K4B2G1646F-BYMA? A5: The RAS pin is used to latch the row address during read and write operations.

Q6: What does the CS pin do in the K4B2G1646F-BYMA? A6: The CS (Chip Select) pin is used to enable or disable the chip.

Q7: Can I use the K4B2G1646F-BYMA in a 1.35V system? A7: No, the K4B2G1646F-BYMA is designed for a 1.5V supply voltage, and using it at 1.35V may cause instability.

Q8: What is the ODT function in the K4B2G1646F-BYMA? A8: ODT (On-Die Termination) helps in reducing signal reflections by providing termination at the chip itself.

Q9: What is the maximum data transfer rate of K4B2G1646F-BYMA? A9: The K4B2G1646F-BYMA supports a maximum data rate of 12800 MB/s (for 1600 MHz).

Q10: How is the K4B2G1646F-BYMA initialized after power-up? A10: The initialization process involves the RESET pin being asserted, followed by configuration of the clock and chip select signals.

Q11: What is the function of the CKE pin in K4B2G1646F-BYMA? A11: The CKE (Clock Enable) pin is used to control the clock signal. When high, the clock is active; when low, the clock is disabled.

Q12: How many address lines does K4B2G1646F-BYMA use? A12: It uses 15 address lines.

Q13: What is the voltage tolerance for the VDD and VSS pins? A13: VDD must be 1.5V ± 0.075V, and VSS must be grounded (0V).

Q14: How is the WRITE operation triggered in K4B2G1646F-BYMA? A14: The WRITE operation is triggered when the WE (Write Enable) pin is asserted low.

Q15: Can the K4B2G1646F-BYMA operate at lower than 1600 MHz? A15: Yes, the K4B2G1646F-BYMA can operate at lower frequencies such as 1333 MHz and 1066 MHz.

This detailed information should give you the comprehensive guide to the K4B2G1646F-BYMA. If you'd like more specific answers or need further clarification, feel free to ask!