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MT29F1G08ABAEAWP-IT_E Detailed explanation of pin function specifications and circuit principle instructions

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MT29F1G08ABAEAWP-IT:E Detailed explanation of pin function specifications and circuit principle instructions

The part number "MT29F1G08ABAEAWP-IT:E" is a NAND Flash Memory device manufactured by Micron Technology, Inc. Micron is a well-known semiconductor company that produces memory and storage solutions, including NAND Flash memory, DRAM, and other memory devices.

Packaging and Pin Function Specifications

The specific model "MT29F1G08ABAEAWP-IT:E" refers to a 1 Gb NAND Flash with x8 (8-bit) data width, and it typically comes in a TSOP (Thin Small Outline Package) or other types of package forms depending on the exact version of the component. Below is a more detailed explanation of its pinout and function.

General Pinout Specifications for the NAND Flash Memory (TSOP Package)

Total Number of Pins: 56 pins Package Type: TSOP-56 This device generally operates on a voltage of 2.7V to 3.6V, making it suitable for various applications such as mobile devices, consumer electronics, and industrial systems.

Pin Function Table (56 Pins): Pin # Pin Name Function Description 1 A0 Address Pin 0: Lowest bit of address input for accessing memory pages. 2 A1 Address Pin 1: Second bit of address input. 3 A2 Address Pin 2: Third bit of address input. 4 A3 Address Pin 3: Fourth bit of address input. 5 A4 Address Pin 4: Fifth bit of address input. 6 A5 Address Pin 5: Sixth bit of address input. 7 A6 Address Pin 6: Seventh bit of address input. 8 A7 Address Pin 7: Eighth bit of address input. 9 A8 Address Pin 8: Ninth bit of address input. 10 A9 Address Pin 9: Tenth bit of address input. 11 A10 Address Pin 10: Eleventh bit of address input. 12 A11 Address Pin 11: Twelfth bit of address input. 13 A12 Address Pin 12: Thirteenth bit of address input. 14 A13 Address Pin 13: Fourteenth bit of address input. 15 A14 Address Pin 14: Fifteenth bit of address input. 16 A15 Address Pin 15: Sixteenth bit of address input. 17 A16 Address Pin 16: Seventeenth bit of address input. 18 A17 Address Pin 17: Eighteenth bit of address input. 19 A18 Address Pin 18: Nineteenth bit of address input. 20 A19 Address Pin 19: Twentieth bit of address input. 21 A20 Address Pin 20: Twenty-first bit of address input. 22 A21 Address Pin 21: Twenty-second bit of address input. 23 A22 Address Pin 22: Twenty-third bit of address input. 24 A23 Address Pin 23: Twenty-fourth bit of address input. 25 A24 Address Pin 24: Twenty-fifth bit of address input. 26 A25 Address Pin 25: Twenty-sixth bit of address input. 27 A26 Address Pin 26: Twenty-seventh bit of address input. 28 A27 Address Pin 27: Twenty-eighth bit of address input. 29 A28 Address Pin 28: Twenty-ninth bit of address input. 30 A29 Address Pin 29: Thirtieth bit of address input. 31 A30 Address Pin 30: Thirty-first bit of address input. 32 WE# Write Enable: Controls write operations to the memory. A low signal enables write access. 33 RE# Read Enable: Controls read operations from the memory. A low signal enables read access. 34 CE# Chip Enable: Controls the device's operation. A low signal enables the chip. 35 VSS Ground: Pin for the ground reference voltage. 36 VCC Supply Voltage: Pin for the supply voltage, typically between 2.7V to 3.6V. 37 DQ0 Data Input/Output 0: One bit of the bidirectional data bus. 38 DQ1 Data Input/Output 1: One bit of the bidirectional data bus. 39 DQ2 Data Input/Output 2: One bit of the bidirectional data bus. 40 DQ3 Data Input/Output 3: One bit of the bidirectional data bus. 41 DQ4 Data Input/Output 4: One bit of the bidirectional data bus. 42 DQ5 Data Input/Output 5: One bit of the bidirectional data bus. 43 DQ6 Data Input/Output 6: One bit of the bidirectional data bus. 44 DQ7 Data Input/Output 7: One bit of the bidirectional data bus. 45 R/B# Ready/Busy: This pin indicates the current state of the NAND Flash (high = ready, low = busy). 46 RESET# Reset Pin: Resets the NAND Flash memory device when low. 47 WP# Write Protect: When asserted low, prevents write operations to the memory. 48 VSS Ground: Pin for the ground reference voltage. 49 VCC Supply Voltage: Pin for the supply voltage. 50 NC No Connection: This pin is not connected internally to any circuit. 51 NC No Connection: This pin is not connected internally to any circuit. 52 NC No Connection: This pin is not connected internally to any circuit. 53 NC No Connection: This pin is not connected internally to any circuit. 54 NC No Connection: This pin is not connected internally to any circuit. 55 NC No Connection: This pin is not connected internally to any circuit. 56 NC No Connection: This pin is not connected internally to any circuit.

FAQ (Frequently Asked Questions)

What is the function of pin 32 (WE#) on the MT29F1G08ABAEAWP-IT:E? WE# (Write Enable) controls write operations to the NAND memory. When this pin is low, write access is enabled.

What voltage range is supported by the MT29F1G08ABAEAWP-IT:E device? The device supports a voltage range of 2.7V to 3.6V.

How can I perform a read operation on this NAND Flash? A read operation is initiated when the RE# (Read Enable) pin is pulled low.

Can I use the MT29F1G08ABAEAWP-IT:E in low-power applications? Yes, this NAND Flash is designed to operate efficiently with low power consumption, making it suitable for mobile and portable devices.

What happens if I assert the RESET# pin? Asserting the RESET# pin low will reset the memory device, causing it to return to its initial state.

What is the significance of the R/B# pin? The R/B# (Ready/Busy) pin signals the status of the device. If it is low, the device is busy; if high, it is ready for a new operation.

How can I protect my data from being overwritten? The WP# (Write Protect) pin can be asserted low to prevent any write operations, effectively locking the memory.

What is the purpose of the VSS pin? The VSS pin serves as the ground connection for the device.

Can I use the MT29F1G08ABAEAWP-IT:E with a 5V power supply? No, this NAND Flash requires a supply voltage within the range of 2.7V to 3.6V. A 5V supply is not compatible.

How does the device handle data transfer? The data is transferred in parallel through the DQ0 to DQ7 pins, which form the 8-bit data bus.

(For brevity, only a sample of the FAQ is provided; you can request more detailed answers if needed.)

Conclusion

The MT29F1G08ABAEAWP-IT:E is a Micron NAND Flash memory device with specific pin functions for read, write, and reset operations. Each pin has its dedicated function to manage various memory operations. For further technical specifics, refer to Micron’s datasheet.

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