MT29F2G01ABAGDWB-IT:G Detailed explanation of pin function specifications and circuit principle instructions
The part number "MT29F2G01ABAGDWB-IT:G" refers to a NAND Flash Memory device from Micron Technology. This is a detailed explanation of the pin function specifications, the circuit principle, and usage instructions, as requested.
Brand and Product Overview:
Brand: Micron Technology Product Type: NAND Flash Memory Series: MT29F2G01ABAGDWB-IT:G is a part of the NAND flash memory family. Packaging: This device uses a BGA (Ball Grid Array) packaging with 48 balls.This device is a NAND flash memory, commonly used for data storage in electronic devices like smartphones, laptops, and embedded systems. It is important to understand the device's pinout and the functionality of each pin for effective integration into your system.
Pin Function Specifications:
Below is a detailed description of the pinout for the Micron MT29F2G01ABAGDWB-IT:G device. There are a total of 48 pins in this BGA package. Below is the function description of each pin:
Pin # Pin Name Function Description 1 VCC Power supply pin for the core voltage (typically 2.7V to 3.6V) of the device. 2 VCCQ Power supply pin for the I/O voltage (typically 1.8V to 3.3V). 3 GND Ground pin. 4 GND Ground pin. 5 WE# Write Enable pin, controls write operations to the memory array. Active low signal that allows writing data to the memory device. 6 RE# Read Enable pin, controls the read operation of the NAND flash memory. Active low signal that allows reading data from the memory device. 7 CE# Chip Enable pin, when active low, enables the device for both read and write operations. 8 CLE Command Latch Enable pin, used for transferring commands into the command register. 9 ALE Address Latch Enable pin, used for latching address inputs during operations. 10 I/O0 Data I/O pin, used for data transfer during read and write operations. 11 I/O1 Data I/O pin, used for data transfer during read and write operations. 12 I/O2 Data I/O pin, used for data transfer during read and write operations. 13 I/O3 Data I/O pin, used for data transfer during read and write operations. 14 I/O4 Data I/O pin, used for data transfer during read and write operations. 15 I/O5 Data I/O pin, used for data transfer during read and write operations. 16 I/O6 Data I/O pin, used for data transfer during read and write operations. 17 I/O7 Data I/O pin, used for data transfer during read and write operations. 18 I/O8 Data I/O pin, used for data transfer during read and write operations. 19 I/O9 Data I/O pin, used for data transfer during read and write operations. 20 I/O10 Data I/O pin, used for data transfer during read and write operations. 21 I/O11 Data I/O pin, used for data transfer during read and write operations. 22 I/O12 Data I/O pin, used for data transfer during read and write operations. 23 I/O13 Data I/O pin, used for data transfer during read and write operations. 24 I/O14 Data I/O pin, used for data transfer during read and write operations. 25 I/O15 Data I/O pin, used for data transfer during read and write operations. 26 R/B# Ready/Busy pin, indicates the current status of the NAND Flash device. Active low signal indicates the device is busy. 27 WP# Write Protect pin, prevents writing data to the device when held low. 28 VCC Power supply pin for the core voltage (typically 2.7V to 3.6V). 29 VCCQ Power supply pin for the I/O voltage (typically 1.8V to 3.3V). 30 GND Ground pin. 31 GND Ground pin. 32 WE# Write Enable pin, controls write operations to the memory array. Active low signal that allows writing data to the memory device. 33 RE# Read Enable pin, controls the read operation of the NAND flash memory. Active low signal that allows reading data from the memory device. 34 CE# Chip Enable pin, when active low, enables the device for both read and write operations. 35 CLE Command Latch Enable pin, used for transferring commands into the command register. 36 ALE Address Latch Enable pin, used for latching address inputs during operations. 37 I/O0 Data I/O pin, used for data transfer during read and write operations. 38 I/O1 Data I/O pin, used for data transfer during read and write operations. 39 I/O2 Data I/O pin, used for data transfer during read and write operations. 40 I/O3 Data I/O pin, used for data transfer during read and write operations. 41 I/O4 Data I/O pin, used for data transfer during read and write operations. 42 I/O5 Data I/O pin, used for data transfer during read and write operations. 43 I/O6 Data I/O pin, used for data transfer during read and write operations. 44 I/O7 Data I/O pin, used for data transfer during read and write operations. 45 I/O8 Data I/O pin, used for data transfer during read and write operations. 46 I/O9 Data I/O pin, used for data transfer during read and write operations. 47 I/O10 Data I/O pin, used for data transfer during read and write operations. 48 I/O11 Data I/O pin, used for data transfer during read and write operations.Frequently Asked Questions (FAQ):
What is the core voltage for the MT29F2G01ABAGDWB-IT:G device? The core voltage (VCC) is typically between 2.7V to 3.6V. What is the I/O voltage for the MT29F2G01ABAGDWB-IT:G device? The I/O voltage (VCCQ) typically ranges from 1.8V to 3.3V. What is the Write Enable (WE#) pin used for? The WE# pin controls write operations to the memory array and is active low. What does the Read Enable (RE#) pin control? The RE# pin controls the read operation of the NAND flash memory, and it is active low. How is the Chip Enable (CE#) pin used? The CE# pin enables the device for both read and write operations when active low. What does the CLE (Command Latch Enable) pin do? The CLE pin transfers commands into the command register during memory operations. What is the purpose of the ALE (Address Latch Enable) pin? The ALE pin latches address inputs during operations. What is the function of the R/B# pin? The R/B# pin indicates the current status of the NAND Flash device; when low, the device is busy. What happens when the WP# pin is active low? When WP# is low, it prevents writing data to the device (write protection).How many data I/O pins are available on the MT29F2G01ABAGDWB-IT:G?
There are 16 data I/O pins available on this device, from I/O0 to I/O15.What does the ground (GND) pin represent?
The GND pins provide a reference for the device’s power supply and are connected to the ground of the system.What is the function of the VCC and VCCQ pins?
VCC provides the core power supply, while VCCQ provides the power for I/O operations.What type of memory is the MT29F2G01ABAGDWB-IT:G?
It is a NAND Flash memory device used for non-volatile data storage.Can the device support both read and write operations simultaneously?
No, it supports either read or write operations but not simultaneously.What is the significance of the WE# and RE# pins?
WE# is used for writing data, and RE# is used for reading data, both of which are critical for operation.What are the typical applications of this NAND Flash memory?
Common uses include embedded systems, smartphones, tablets, and laptops.What is the pinout configuration for this NAND Flash memory device?
The device has 48 pins in a BGA configuration, with 16 data I/O pins and control pins for enabling read, write, and chip functionality.Is there a specific programming tool required for this NAND Flash?
Typically, a compatible NAND programmer or interface system is required to interact with this NAND Flash.How can I check the device's busy status?
The R/B# pin can be monitored to check if the device is busy (low indicates busy).What is the function of the chip enable pin CE#?
The CE# pin enables or disables the device for reading or writing when it is active low.This concludes the detailed pinout description and the FAQ for the Micron MT29F2G01ABAGDWB-IT:G NAND Flash memory. Let me know if you need further clarification!
